JPH087646Y2 - 静電誘導型トランジスタ - Google Patents

静電誘導型トランジスタ

Info

Publication number
JPH087646Y2
JPH087646Y2 JP1989096701U JP9670189U JPH087646Y2 JP H087646 Y2 JPH087646 Y2 JP H087646Y2 JP 1989096701 U JP1989096701 U JP 1989096701U JP 9670189 U JP9670189 U JP 9670189U JP H087646 Y2 JPH087646 Y2 JP H087646Y2
Authority
JP
Japan
Prior art keywords
source
gate
buried gate
sources
induction transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1989096701U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0336154U (en]
Inventor
英二 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP1989096701U priority Critical patent/JPH087646Y2/ja
Publication of JPH0336154U publication Critical patent/JPH0336154U/ja
Application granted granted Critical
Publication of JPH087646Y2 publication Critical patent/JPH087646Y2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
JP1989096701U 1989-08-21 1989-08-21 静電誘導型トランジスタ Expired - Fee Related JPH087646Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989096701U JPH087646Y2 (ja) 1989-08-21 1989-08-21 静電誘導型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989096701U JPH087646Y2 (ja) 1989-08-21 1989-08-21 静電誘導型トランジスタ

Publications (2)

Publication Number Publication Date
JPH0336154U JPH0336154U (en]) 1991-04-09
JPH087646Y2 true JPH087646Y2 (ja) 1996-03-04

Family

ID=31645888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989096701U Expired - Fee Related JPH087646Y2 (ja) 1989-08-21 1989-08-21 静電誘導型トランジスタ

Country Status (1)

Country Link
JP (1) JPH087646Y2 (en])

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651678B2 (ja) * 1987-10-02 1997-09-10 財団法人半導体研究振興会 高耐圧半導体素子及びその製造方法

Also Published As

Publication number Publication date
JPH0336154U (en]) 1991-04-09

Similar Documents

Publication Publication Date Title
JP3207615B2 (ja) 半導体装置
US4686551A (en) MOS transistor
JP2973588B2 (ja) Mos型半導体装置
JP3905981B2 (ja) 高耐圧半導体装置
US6441432B1 (en) High voltage lateral semiconductor device
JP2001028425A (ja) 半導体装置及びその製造方法
JPH0758782B2 (ja) 半導体装置
JP2556175B2 (ja) 半導体装置における電界集中防止構造
JPS63311766A (ja) Misパワートランジスタ
JPH087646Y2 (ja) 静電誘導型トランジスタ
JPH049378B2 (en])
DE112021005798T5 (de) Schichtkondensator und halbleiterbauelement
US5466959A (en) Semiconductor device for influencing the breakdown voltage of transistors
JPS5889864A (ja) 絶縁ゲ−ト型半導体装置
CN115763543B (zh) 复合屏蔽栅场效应晶体管
JPS62130551A (ja) 集積回路
EP0834927A2 (en) Semiconductor IC device
CN223167479U (zh) 半导体结构
JPH02153570A (ja) 半導体素子
JP2024170063A (ja) 半導体装置
DE102024131671A1 (de) Halbleitervorrichtung
JP2524553Y2 (ja) 電力用半導体素子
JPH0774353A (ja) 入出力保護回路
JPH06338520A (ja) 電界効果型トランジスタ
JPS6184050A (ja) モノリシツク集積バイポーラダーリントン回路

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees